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| PD54008 - PD54008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V * NEW RF PLASTIC PACKAGE DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD54008's superior linearity performance makes it an ideal solution for portable radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD54008 PD54008 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD54008S XPD54008S ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 Value 25 20 5 73 165 -65 to 165 Unit V V A W 0C 0C THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resistance 1.3 0 C/W 1/10 PD54008 - PD54008S ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC Symbol IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter VDS = 25V VDS = 0 V ID = 150 mA ID = 2 A ID = 2 A VDS = 7.5 V VDS = 7.5 V VDS = 7.5 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 2.5 91 68 8.5 2.0 Min. Typ. Max. 1 1 5.0 0.7 Unit A A V V mho pF pF pF DYNAMIC Symbol POUT GPS D LOAD Mismatch f = 500 MHz f = 500 MHz f = 500 MHz Parameter VDD = 7.5 V VDD = 7.5 V VDD = 7.5 V IDQ = 150 mA POUT = 8 W POUT = 8 W POUT = 8 W IDQ = 150 mA IDQ = 150 mA IDQ = 150 mA 20:1 Min. 8 10 50 Typ. Max. Unit W dB % VSWR f = 500 MHz VDD = 9.5 V ALL PHASE ANGLES PIN CONNECTION SOURCE D ZDL GATE DRAIN G Zin Typical Input Impedance Typical Drain Load Impedance SC15200 SC13140 S PD54008 Frequency MHz 480 500 520 Zin IMPEDANCE DATA PD54008S Zdl Frequency MHz 480 500 520 Zin Zdl 2.00 - j1.44 1.92 - j1.21 2.18 - j.88 1.41 - j.38 1.58 - j.70 1.61 - j1.05 1.69 - j1.48 1.63 - j1.40 1.75 - j.71 1.65 - j.40 1.49 - j.09 1.36 -j.88 2/10 PD54008 - PD54008S TYPICAL PERFORMANCE Capacitance vs. Drain Voltage 1000 3.5 Drain Current vs. Gate Voltage 4 f=1 MHz Id, DRAIN CURRENT (A) 3 2.5 2 1.5 1 VDS= 10V C, CAPACITANCE (pF) 100 Ciss Coss 10 Crss 0.5 0 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 3.5 4 4.5 5 Vgs, GATE-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.04 1.02 ID = 3A ID = 2A 1 ID = 1.5A 0.98 VDS= 10V ID = 1A ID =.25A 0.96 -25 0 25 50 75 Tc, CASE TEMPERATURE (C) 3/10 PD54008 - PD54008S TYPICAL PERFORMANCE Output Power vs. Input Power 10 480 MHz 520 MHz PD54008 Power Gain vs. Output Power 14 480M Hz Pout, OUTPUT POWER (W) 8 500MHz Gp, POWER GAIN (dB) 12 500MHz 6 10 520MHz 4 8 2 6 VDD= 7.5 V IDQ =150mA VDD =7.5V IDQ= 150mA 0 0 0.5 1 1.5 2 2.5 4 0 1 2 3 4 5 6 7 8 9 10 Pin, INPUT POWER (W) Pout, OUTPUT POWER (W) Drain Efficiency vs. Output Power 60 Return Loss vs. Output Power 0 Nd, DRAIN EFFICIENCY (%) 50 40 Rtl, RETURN LOSS (dB) 500MHz 480MHz -10 500 MHz 30 520MHz -20 480MHz 20 520MHz -30 VDD= 7.5 V IDQ= 150mA 10 VDD=7.5V IDQ=150mA 0 0 1 2 3 4 5 6 7 8 9 10 -40 0 1 2 3 4 5 6 7 8 9 10 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Output Power vs. Bias Current 12 480MHz Drain Efficiency vs. Bias Current 70 10 Pout, OUTPUT POWER (W) 500MHz Nd, DRAIN EFFICIENCY (%) 60 480M Hz 500M Hz 8 520MHz 6 50 520M Hz 4 VDD=7.5 V PIN=1 W 40 VDD =7.5V PIN= 1W 2 0 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 30 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 4/10 PD54008 - PD54008S TYPICAL PERFORMANCE Output Power vs. Drain Voltage 20 Drain Efficency vs. Drain Voltage 60 Pout, OUTPUT POWER (W) Nd, DRAIN EFFICIENCY (%) 480MHz 480 MHz 15 500 MHz 50 500 MHz 10 520MHz 40 520MHz 5 Idq = 150mA PIN= 1 W 30 Idq =150 mA PIN =1 W 0 5 6 7 8 9 10 11 12 20 5 6 7 8 9 10 11 12 VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Output Power vs. Gate Bias Voltage 10 480 MHz Output Power vs. Input Power 10 480 MHz PD54008S 520MHz Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 8 8 500MHz 6 500 MHz 6 520MHz 4 4 2 VDD= 7.5 V PIN= 1W 2 VDD= 7.5V IDQ= 150 mA 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE BIAS VOLTAGE (V) Pin, INPUT POWER (W) Power Gain vs. Output Power 16 Drain Efficiency vs. Output Power 70 480MHz 60 Nd, DRAIN EFFICIENCY (%) Gp, POWER GAIN (dB) 14 480M Hz 500 MHz 50 40 30 20 10 0 520MHz 12 520M Hz 500MHz 10 8 VDD =7.5 V IDQ=150mA VDD= 7.5 V IDQ= 150 mA 6 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 5/10 PD54008 - PD54008S TYPICAL PERFORMANCE Return Loss vs. Output Power 0 VDD =7.5 V IDQ= 150 mA Output Power vs. Bias Current 12 -10 520 MHz Pout, OUTPUT POWER (W) 10 480 MHz Rtl, RETURN LOSS (dB) 8 520MHz -20 480 MHz 6 500 MHz 4 500MHz -30 2 VDD = 7.5 V PIN = 0.7 W -40 0 1 2 3 4 5 6 7 8 9 10 0 0 200 400 600 800 1000 Pout, OUTPUT POWER (W) Idq, BIAS CURRENT (mA) Drain Efficiency vs. Bias Current 70 Output Power vs. Drain Voltage 20 480MHz Nd, DRAIN EFFICIENCY (%) 480MHz Pout, OUTPUT POWER (W) 60 500MHz 15 520MHz 50 520 MHz 10 500MHz 40 VDD =7.5 V PIN= 0.7W 5 Idq=150mA PIN=0.7W 30 0 200 400 600 800 1000 0 5 6 7 8 9 10 11 12 Idq, BIAS CURRENT (mA) VDS, DRAIN-SOURCE VOLTAGE (V) Drain Efficency vs. Drain Voltage 70 Output Power vs. Gate Bias Voltage 10 480 MHz Nd, DRAIN EFFICIENCY (%) 60 480MHz Pout, OUTPUT POWER (W) 8 520 MHz 500M Hz 520M Hz 6 500 MHz 50 4 40 Idq =150mA PIN=0.7W 2 VDD = 7.5 V PIN= 0.7W 30 5 6 7 8 9 10 11 12 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE BIAS VOLTAGE (V) 6/10 PD54008 - PD54008S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1,B2 C1,C14 C2,C3,C4,C11, C12,C13 C6,C18 C9,C15 C8,C16 C7,C17 C5, C10 L1 N1,N2 FERRITE BEAD 300pF, 100 mil CHIP CAPACITOR 1 TO 20 pF TRIMMER CAPACITOR pF 100 mil CHIP CAP 10F, 50V ELECTROLYTIC CAPACITOR 0.1mF, 100 mil CHIP CAP 1,000pF 100 mil CHIP CAP 33pF, 100 mil CHIP CAP 56nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 1,0k, 1W CHIP RESISTOR 33 k, 1W CHIP RESISTOR 0.471" X 0.080" MICROSTRIP 1.082" X 0.080" MICROSTRIP 0.372" X 0.080" MICROSTRIP 0.260" X 0.223" MICROSTRIP 0.050" X 0.080" MICROSTRIP 0.551" X 0.080" MICROSTRIP 0.825" X 0.080" MICROSTRIP 0.489" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000 R1 15 , 1W CHIP RESISTOR BOARD THK 0.030" r = 2.55 2oz ED Cu 2 SIDES 7/10 PD54008 - PD54008S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 6.4 inches 8/10 4 inches PD54008 - PD54008S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 9/10 PD54008 - PD54008S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10 |
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